31. Thermal Atomic Layer Etching of Zinc Oxide from 30-300°C Using Sequential Exposures of Hydrogen Fluoride and Trimethylgallium

Taewook Nam, David R. Zywotko, Troy A. Colleran, Jonathan L. Partridge, and Steven M. George*
Chemistry of Materials. 2025, XXX, XXX, XXX-XXX

30. Removing Defects from Sputter Damage on InGaP Surfaces Using Thermal Atomic Layer Etching

Ross Edel, Ezra Alexander, Taewook Nam, Andrew S. Cavanagh, Troy Van Voorhis, Steven M. George*
Journal of Vacuum Science & Technology A 42, 062602 (2024)

29. Thermal Atomic Layer Etching of Molybdenum Using Sequential Oxidation and Deoxychlorination Reactions

Taewook Nam, Troy A. Colleran, Jonathan L. Partridge, Andrew S. Cavanagh, and Steven M. George*
Chemistry of Materials, 2024, 36, 3, 1449–1458

28. Atomic Layer Deposition of Pt Nanoparticles Using Dimethyl(N, N‑dimethyl-3-butene-1-amine‑N) Platinum and H₂ Reactant and Its Application to 2D WS₂ Photodetectors

Dain Shin, Inkyu Sohn, Donghyun Kim, Jaehyeok Kim, Taewook Nam, Youngjun Kim, Jusang Park, Tatsuya Nakazawa*, Seung-min Chung*, and Hyungjun Kim*
Journal of Vacuum Science and Technology A 42, 012405 

27. Thermal Atomic Layer Etching of Zinc Sulfide Using Sequential Trimethylaluminum and Hydrogen Fluoride Exposures: Evidence for a Conversion Mechanism

Taewook Nam, Troy A. Colleran, Jonathan L. Partridge, Andrew S. Cavanagh, and Steven M. George*
Chem. Mater. 2023, 35, 17, 6671–6681

26. Growth Mechanism and Electrical Properties of Tungsten Films deposited by Plasma-enhanced Atomic Layer Deposition with Chloride and Metal

Yujin Lee, Seunggi Seo, Taewook Nam, Hyunho Lee, Hwi Yoon, Sangkyu Sun, Il-Kwon Oh,  Sanghun Lee, Jin Hyung Seo, Jang Hyeon Seok, and Hyungjun Kim
Applied Surface Science 568 (2021) 150939

25. Hydrogen Barrier based on Chemical Trapping using Chemically–modulated Al₂O₃ grown by Atomic Layer Deposition for InGaZnO Thin Film Transistor

Yujin Lee^#, Taewook Nam^#, Seunggi Seo, Hwi Yoon, Chong Hwon Lee, Hyukjoon Yoo, Hyun Jae Kim, Wonjun Choi, Seongil Im, Joon Young Yang, Dong Wook Choi, Choongkeun Yoo, Ho-jin Kim, and Hyungjun Kim
#These authors contributed equally. Selected as a cover.
ACS Applied Materials & Interfaces, 2021, 13, 17, 20349-20360

24. Two-Dimensional MoS₂ Charge Injection Memory Transistors Utilizing Hetero-stack SiO₂/HfO₂  Dielectrics and Oxide Interface Traps

Livia Janice Widiapradja^#, Taewook Nam^#, Yeonsu Jeong, Hye-Jin Jin, Yangjin Lee, Kwanpyo Kim, Sangyoon Lee, Hyungjun Kim*, Heesun Bae*, and Seongil Im*
#These authors contributed equally.
Advanced Electronic Materials, 2021, 2100074

23. MoS₂ Doping by Atomic Layer Deposition of High-k Dielectrics using Alcohol as Process Oxidants

Whang Je Woo, Seunggi Seo, Taewook Nam, Youngjun Kim, Donghyun Kim, Jeong-Gyu Song, Jun Hyung Lim, Hyung-Jun Kim, and Hyungjun Kim
Applied Surface Science, 541 (2021) 148504

22. Atomic Layer Deposition of a Uniform Thin Film on 2-dimensional Transition Metal Dichalcogenides

Taewook Nam, Seunggi Seo, and Hyungjun Kim
Journal of Vacuum Science and Technology A, 38, 030803 (2020)
(Selected as a Featured Article)

21. Comparative Study on Atomic Layer Deposition of HfO₂ via Substitution of Ligand Structure with Cyclopentadiene

Sungmin Park, Bo-Eun Park, Hwi Yoon, Sanghun Lee, Taewook Nam, Taehoon Cheon, SooHyun Kim, Hwansung Cheon, Sangkyun Im, Taegeun Seong and Hyungjun Kim
Journal of Materials Chemistry C (2020), 8, 1344-1352

20. Atomic layer deposition for nonconventional nanomaterials and their applications

Taewook Nam and Hyungjun Kim*
Journal of Materials Research (2020), 35(7) 656-680
(Invited Feature Paper)

19. Moisture Barrier Properties of Low-temperature ALD Al₂O₃ using Various Oxidants

Taewook Nam, Haksoo Lee, Sung Min Cho, Bonggeun Shong, Han-Bo-Ram Lee*, and Hyungjun Kim*
Ceramics International (2019), 45, 19105–19112

18. Hydrogen Barrier Performance of Lanthanum Oxide Deposited by Reactive Magnetron Sputtering

Yujin Lee, Chong Hwon Lee, Taewook Nam, Sanghun Lee, Il-Kwon Oh, Joon Young Yang, Dong Wook Choi, Choongkeun Yoo, Ho-jin Kim, Woo-Hee Kim*, and Hyungjun Kim*
Journal of Material Science (2019) 54: 11145

17. Low-temperature, High-growth-rate ALD of SiO₂ using Novel Aminodisilane Precursor

Taewook Nam, Hyunho Lee, Taejin Choi, Seunggi Seo, Chang Mo Yoon, Yunjung Choi, Heonjong Jeong, Hima K. Lingam, Venkateswara R. Chitturi, Andrey Korolev, Jong-Hyun Ahn, and Hyungjun Kim*
Applied Surface Science, 485 (2019) 381-390

16. Molecular Oxidation of Surface -CH₃ During Atomic Layer Deposition of Al₂O₃ with H₂O, H₂O₂, and O₃: A Theoretical Study

Seunggi Seo, Taewook Nam, Han-Bo-Ram Lee, Hyungjun Kim*, and Bonggeun Shong*
Applied Surface Science, 457 (2018) 376-380

15. High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

Whang Je Woo, Taewook Nam, Il‑Kwon Oh, Wanjoo Maeng, and Hyungjun Kim*
Metals and Materials International, 24 (2018) 652–656

14. Cobalt Titanium Nitride Amorphous Metal Alloys by Atomic Layer Deposition

Taewook Nam, Chang Wan Lee, Taehoon Cheon, Woo Jae Lee, Soo-Hyun Kim, Se-Hun Kwon, Hyungjun Kim*, and Han-Bo-Ram Lee*
Journal of Alloys and Compounds, 737 (2018) 684-692

13. Surface-Localized Sealing of Porous Ultralow-k Dielectric Films with Ultrathin (<2 nm) Polymer Coating

Seong Jun Yoon, Kwanyong Pak, Taewook Nam, Alexander Yoon, Hyungjun Kim, Sung Gap Im*, and Byung Jin Cho*
ACS Nano, 2017, 11 (8), pp 7841–7847

12. A Composite Layer of Atomic-layer-deposited Al₂O₃ and Graphene for Flexible Moisture Barrier

Taewook Nam, Yong Ju Park, Haksoo Lee, Il-Kwon Oh, Jong-Hyun Ahn, Sung Min Cho, Hyungjun Kim*, and Han-Bo-Ram Lee*
Carbon, 116 (2017) 553-561

11. Effects of TaN Diffusion Barrier on Cu-Gate ZnO:N Thin-film Transistors

Whang Je Woo, Taewook Nam, Hanearl Jung, Il-Kwon Oh, Jeong-Gyu Song, Han-Bo-Ram Lee, Wanjoo Maeng*, and Hyungjun Kim*
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 5, MAY 2016

10. High‐performance Alternating Current Electroluminescent Layers Solution Blended with Mechanically and Electrically Robust Nonradiating Polymers

Seong Soon Jo, Sung Hwan Cho, Hae Jin Kim, Taewook Nam, Ihn Hwang, Seok-Heon Jung, Richard Hahnkee Kim, Dhinesh Babu Velusamy, Ju Han Lee, Taejoon Park, Jin Kyun Lee, Dae-Eun Kim, Hyungsuk Lee, Hyungjun Kim, Cheolmin Park*
JOURNAL OF POLYMER SCIENCE, PART B: POLYMER PHYSICS 2015, 53, 1629–1640

9. Growth Characteristics and Properties of Indium Oxide and Indium-doped Zinc Oxide by Atomic Layer Deposition

Donghyun Kim, Taewook Nam, Jusang Park, Julien Gatineau, Hyungjun Kim*
Thin Solid Films 587 (2015) 83–87

8. Growth Characteristics and Properties of Ga-doped ZnO (GZO) Thin Films Grown by Thermal and Plasma-enhanced Atomic Layer Deposition

Taewook Nam, Chang Wan Lee, Hyun Jae Kim, Hyungjun Kim*
Applied Surface Science 295 (2014) 260–265

7. Graphene as an Atomically Thin Barrier to Cu Diffusion into Si

Juree Hong, Sanggeun Lee, Seulah Lee, Heetak Han, Chandreswar Mahata, Han-Wool Yeon, Bonwoong Koo, Seong-Il Kim, Taewook Nam, Kisik Byun, Byung-Wook Min, Young-Woon Kim, Hyungjun Kim, Young-Chang Joo and Taeyoon Lee*
Nanoscale, 2014, 6, 7503–7511

6. Direct Imprinting of MoS₂ Flakes on a Patterned Gate for Nanosheet Transistors

Kyunghee Choi, Young Tack Lee, Sung-Wook Min, Hee Sung Lee, Taewook Nam, Hyungjun Kim, and Seongil Im*
Journal of Materials Chemistry C, 2013, 1, 7803

5. Nanosheet Thickness-modulated MoS₂ Dielectric Property Evidenced by Field-effect Transistor Performance

Sung-Wook Min, Hee Sung Lee, Hyoung Joon Choi, Min Kyu Park, Taewook Nam, Hyungjun Kim, Sunmin Ryu and Seongil Im*
Nanoscale 2013, 5, 548-551

4. MoS₂ Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

Hee Sung Lee, Sung-Wook Min, Youn-Gyung Chang, Min Kyu Park, Taewook Nam, Hyungjun Kim, Jae Hoon Kim, Sunmin Ryu, and Seongil Im*
Nano Letters, 2012, 12 (7), pp 3695–3700

3. Low-temperature Atomic Layer Deposition of TiO₂, Al₂O₃, and ZnO Thin Films

Taewook Nam, Jae-Min Kim, Min-Kyu Kim, Woo-Hee Kim, Hyungjun Kim*
Journal of the Korean Physical Society, Vol. 59, No. 2, August 2011, pp. 452-457

2. The Effects of Ultraviolet Exposure on the Device Characteristics of Atomic Layer Deposited-ZnO:N Thin Film Transistors

Jae-Min Kim, S. J. Lim, Taewook Nam, Doyoung Kim, and Hyungjun Kim*
Journal of The Electrochemical Society, 158 (5) J150-J154 (2011)

1. Atomic Layer Deposition ZnO:N Flexible Thin Film Transistors and the Effects of Bending on Device Properties

Jae-Min Kim, Taewook Nam, S. J. Lim, Y. G. Seol, N.-E. Lee, Doyoung Kim, and Hyungjun Kim
Applied Physics Letters 98, 142113 (2011)